SOI structure with reinforced anti-irradiation performance and manufacturing method thereof

The invention provides an SOI (Silicon-On-Insulator) structure with reinforced anti-irradiation performance and a manufacturing method thereof. The manufacturing method of the SOI structure with reinforced anti-irradiation performance comprises the following steps: providing two wafers, and forming an insulation oxide layer on a surface of at least one wafer; carrying out injection of an irradiation proton, an irradiation neutron and the like on the insulation oxide layer, and introducing displacement damage in the insulation oxide layer; carrying out bonding of the two wafers through the insulation oxide layer; thinning one of the two wafers after bonding to form an SOI structure. In a process of utilizing bonding technology to prepare an SOI, through a method of injecting the proton, the neutron and the like into a buried oxide layer and introducing the displacement damage to form a composite center, anti-irradiation performance of an SOI device is raised, simultaneously, damage of a top silicon layer is avoided, and the performance of the device is not influenced.