Resistive memory based on single-crystalline black phosphorus flake/HfOx structure

Two-dimensional materials are gaining more and more attention in the field of electronic devices because of their unique advantages, such as high crystalline quality and clean and flat contact planes; compared to traditional materials, the use of two-dimensional materials as the working layer of a resistive random-access memory (RRAM) has the potential to further reduce the device size and enhance its performance. Herein, a black phosphorus (BP) single crystal flake passivated by hafnium oxide is used as the working layer for an RRAM. The devices show a switching on/off ratio of 102 in more than 100 cycles, and others can even be as high as 106. We speculated the working mechanism of the BP RRAM based on the results of serial experiments and transport analysis.