Electrical Parameters Degradation of E-mode GaN Under Repeated Short-Circuit Impacts

Electrical parameters degradation of the 650V/30A E-mode GaN HEMT under repeated short circuit (RSC) impacts have been investigated. The repeated short-circuit impacts conditions are as followes: short circuit voltage is 100V, gate pulse voltage is 5V, pulse period is 0.5S, and the pulse duty is 6ppm. The number of short-circuit impacts is 100, 300, 500, 1k, 5k and 10k times respectively. After short-circuit impact, the threshold voltage Vth, the static on-state resistance Ron_s and the dynamic on-resistance Ron_d are measured. The test results show that all of these parameters have been increased with the increase of the RSC impacts number. The increase rates of Vth, Ron_s and Ron_d are 23.7%, 9.8% and 10.8% respectively. After 3 days room temperature annealing, both Ron_s and Ron_d almost recovered to their initial value, but the threshold voltage is still 4.1% larger than the original value.