Two-beam interference exposure device, the two-beam interference exposure method, a method of manufacturing the semiconductor light emitting element, and a semiconductor light emitting element

The second harmonic of an Ar laser, or the fourth harmonic of Nd-doped YAG laser as a light source, to realize a two-beam interference exposure apparatus capable of generating a very homogeneous and highly coherent laser beam by the etalon and the half-wave plate. The exposure is performed in the periodic pattern in the photoresist mask by the two-beam interference exposure, followed by development of the photoresist mask, the patterning of the semiconductor layer etching mask using the resist pattern as a mask, after removing the resist, the light extraction surface by etching, it is possible to manufacture a highly semiconductor light-emitting device energy conversion efficiency at very low cost.