Ion etching technology for non-drive structure MEMS gyro of silicon chip

By combining the theory and experiment of plasma etching,ion etching technology of non-drive MEMS gyroscope of silicon chip has been studied. Experiments show that: the uniformity of etching depth of 55 μm silicon is 0. 63%. Selection ratio is 90:1. The etching rate is 7. 25 μm / min.The verticality is 90° ± 1°. By applying this technology,the etched chip is flat and smooth,which has solved the difficulty of lateral corrosion for wet etching and improved the etching rate.