A NOVEL RF VERTICAL MOSFET FOR PULSED APPLICATIONS
2003
This paper will discuss the results of a high breakdown voltage Vertical DMOS RF amplifier that employs power trench technology TM to achieve high pulse RF peak power. The RF device can achieve a power of 80 W at an operating voltage of 26V and a 5% duty cycle.
Keywords:
- Correction
- Cite
- Save
- Machine Reading By IdeaReader
3
References
0
Citations
NaN
KQI