Structure and luminescence of silicon irradiated by protons

The temperature dependence of photoluminescence (PL) in the range 8–300 K is studied for single crystalline silicon irradiated by protons at high temperatures. It is shown that the samples with p-type conductivity display intense PL in contrast to the samples with n-type conductivity, which do not display photo-luminescence. Studies using high-resolution transmission electron microscopy (TEM) have shown that photoluminescence exists until crack formation and splitting of the irradiated layer. The rodlike defects {113} formed during irradiation transform into residual fragments of dislocation structures.