Design of a Multi-GHz SiGe HBT EO Modulator
2010
Silicon-based electro-optic (EO) modulator is an indispensable building block for integrated lightwave circuits. In this
paper, we report an EO modulator that incorporates a heterojunction bipolar transistor (HBT) with Ge composition
graded base. The emitter is n-type doped silicon with a doping concentration of 10 21 /cm 3 . The width of the emitter strip
is 0.2μm and the thickness of the emitter layer is 0.16μm. The base has a thickness of 40nm with varying Ge
composition from zero at the emitter-base junction side to 20% at the base-collector junction side. Raised extrinsic base
is incorporated for base contact. The intrinsic base is p-type doped with a concentration of 4×10 19 /cm 3 . The HBT is
biased at V CE = 0.5 V whereas VBE is switched between -1.0V and 1.0V. The carrier distribution at "ON" state of the EO
modulator and the transient analysis are performed by MEDCI simulation. The changes of the refractive indices of the
HBT are computed from the carrier density in all regions, and then the refractive index map is imported into an optical
mode solver (RSoft BeamProp). The HBT EO modulator that supports only one optical mode is ideal, but a trade-off
between modal property and device speed is observed. For current design, we achieved a π-phase modulation length of
less than 600μm, and a switching delay less than 62ps.
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