Optimization of temperature-time profiles in rapid thermal annealing

Rapid thermal annealing (RTA) is widely used in modern IC technology to reduce the amount of transient enhanced diffusion (TED) of dopants after ion implantation. The effect of diffusion reduction due to fast temperature ramping (50/spl deg/C/s and above) and short annealing times (less than 10 seconds at 1000/spl deg/C) is well known. However, a systematic investigation of TED over a broad range of temperature-time conditions can, to the authors' best knowledge, not be found in the literature yet. In this simulation study we investigate phosphorus TED between 600/spl deg/C and 1100/spl deg/C for annealing times from a few seconds to several hours.