Investigations on the oxidation phenomenon of SiC/SiC fabricated by high repetition frequency femtosecond laser

Abstract SiC/SiC was processed by high repetition frequency femtosecond laser with a wavelength of 1030 nm. The experimental results were analyzed based on the finite element simulation. In the femtosecond laser ablation experiment of SiC/SiC, the processing morphologies under different laser power, repetition frequency, scanning times and scanning velocity were compared. It was found that surface oxidation is an obvious defect in the high-frequency femtosecond laser processing of SiC/SiC, which needs to be controlled. The oxidation phenomenon became more and more obvious with the increased of laser power, repetition frequency and scanning times, while it decreased with the increased of scanning velocity. The parameters of material and laser processing were input into the heat transfer module of the finite element simulation software. The simulation results could intuitively show the formation of different morphological features from the perspective of the temperature field. Finally, the surface oxidation of SiC/SiC was effectively controlled through rationally optimizing the laser processing parameters, and good morphology was obtained. The comparison between simulation and experimental results can help to understand the ablation mechanism of SiC/SiC by high-frequency femtosecond laser, and provide reference for the efficient and precise manufacture of CMC-SiC materials by pulsed laser.