The mutual influence of krypton implantation and pre-existing stress states in polycrystalline alpha titanium

The stress profile in polycrystalline titanium implanted with krypton ions at different fluences has been determined using synchrotron radiation diffraction. For each fluence, the krypton profile has been measured using Rutherford backscattering geometry. The results were compared to model calculations obtained from the SRIM 2008 computer code. A strong stress relaxation was found for high fluence implantation, whereas for low fluence implantation an additional source of tensile stress was introduced in the near surface region. The projected range of the implanted krypton was significantly reduced compared to the expected range. A possible cause of this discrepancy is the drift of implanted ions under the influence of the pre-existing stress gradient.