Electron and hole contribution to thermal noise in short-channel MOSFETs
2001
We used a 2D Green's function method similar to the Impedance Field Method for an accurate high frequency noise analysis. The method has been proven to reasonably well predict the noise performance of semiconductor devices, including MOSFETs. In the present paper we applied the method to a 0.2/spl mu/m gate NMOSFET.
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