Band structures and optical properties of Ga1−xInxAs quantum wires grown by strain-induced lateral ordering

Band structures and optical matrix elements of strained multiple quantum wires (QWRs) are investigated theoretically via the effective bond-orbital model, which takes into account the effects of valence band anisotropy and the band mixing. In particular, the Ga1−xInxAs QWRs grown by strain-induced lateral ordering (SILO) are considered. Recently, long wavelength Ga1−xInxAs QWR lasers have been fabricated via a single step molecular beam epitaxy technique which uses the SILO process [S. T. Chou, K. Y. Cheng, L. J. Chow, and K. C. Hsieh, Appl. Phys. Lett. 17, 2220 (1995); J. Appl. Phys. 78, 6270 (1995); J. Vac. Sci Technol. B 13, 650 (1995); K. Y. Cheng, K. C. Hsien, and J. N. Baillargeon, Appl. Phys. Lett. 60, 2892 (1992)]. Low threshold current and high optical anisotropy have been achieved. Multiaxial strains [combinations of biaxial strains in the (001) and (110) planes] for QWRs are considered. Our calculated anisotropy in optical matrix elements (for light polarized parallel versus perpendicular to th...