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Atomic layer deposition of HfO[sub 2] and Al[sub 2]O[sub 3] layers on 300 mm Si wafers for gate stack technology
Atomic layer deposition of HfO[sub 2] and Al[sub 2]O[sub 3] layers on 300 mm Si wafers for gate stack technology
2011
R. Luptak
J.M.J. Lopes
St. Lenk
Barry A. Hollander
Eylem Durgun Ozben
A. T. Tiedemann
Mathias Schnee
J. Schubert
S. Habicht
S.F. Feste
Siegfried Mantl
U. Breuer
Astrid Besmehn
Peter K. Baumann
M. Heuken
Keywords:
Analytical chemistry
Atomic layer deposition
Wafer
Chemistry
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