A High Performance Ge PIN Photodiode Compatible with High Volume Silicon Photonics Production Processes
2018
A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 GHz optical bandwidth, and dark current density of 90 mA/cm 2 @-1V.
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