A photoelectric conversion element and solid-state imaging device

The present application relates to a photoelectric conversion element and a solid-state imaging device. Wherein, the photoelectric conversion element comprising: a first and second electrodes from each other provided separately; and a photoelectric conversion region disposed between the first electrode and the second electrode. The photoelectric conversion region includes a plurality of layers, at least one layer (2) anthracene-based compound fitted dioxa formed anthracene shown by the formula (1) or structural formula of said plurality of layers. But in formula (1) R3 and R9 is a substituent at least one group other than hydrogen, and R1-R11 (2) in formula is at least one substituent group other than hydrogen.