Application of the fluorinated graphene photodetector element in the manufacture of

The present invention provides a new use of fluorinated graphene, i.e. graphene fluorination use as in the production of the photodetector element and the flexible member optoelectronic photodetector sensitive material. The device can detect a wavelength less than 415? nm light. The present invention is the first use of the fluorinated graphene photodetector element produced as the electrophotosensitive material, a flexible substrate can be achieved using a flexible member of the photodetector, as compared to the organic semiconductor photodetector flexible member, it has the advantage of excellent high frequency performance and low power consumption. And fluorinated graphene resistance up to 1? TΩ above, produced using fluorinated graphene photodetector having a very low dark current noise. It can be prepared by a chemical vapor deposition method for large-area graphene thin film (up to 30 inches diagonal), which is broadband other inorganic semiconductor thin film can not be achieved, and therefore can be produced on large scale photodetection fluorinated graphene arrays.