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Origin of Low Channel Mobility and Threshold Voltage Instability of SiC-MOSFETs
Origin of Low Channel Mobility and Threshold Voltage Instability of SiC-MOSFETs
2015
Hiromu Shiomi
H. Kitai
M. Tsujimura
Yuji Kiuchi
Daisuke Nakata
Shûichi Ôno
Kazutoshi Kojima
Kenji Fukuda
Kunihiro Sakamoto
K. Yamasaki
Hajime Okumura
Keywords:
Instability
Electronic engineering
Threshold voltage
Communication channel
Materials science
threshold voltage instability
Optoelectronics
Correction
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