Drain current model for bulk strained silicon NMOSFETs

In this paper, we develop an analytical model to simulate strained silicon NMOSFETs, which allows to describe the drain current. Numerical simulations were performed in order to validate the model, where different technological parameters were considered (e.g. impurity concentrations in Si 1−y Ge y and strained-silicon films). A good agreement with numerical simulations has been obtained.