OMCVD of molybdenum and tungsten carbonitride films from (Cp)M-(Nt-Bu){sub 2}CH{sub 3} (M = W, Mo)

Thin films were deposited on Si(100) or GaAs(100) wafers in a hot wall CVD apparatus from the volatile precursors in the range 400-580{degree}C and under a gas stream either of He or of H{sub 2}. In all cases, the films are dark and shiny in appearance. Scanning electron microscopy showed them to be tight-grained and smooth down to the sub-micron level. Powder x-ray diffraction indicated the films were largely amorphous. Annealing the molybdenum containing depositions on Si(100) at 700{degree}C under a flow of He for 3 h. brings out some sharp features characteristic of molybdenum and carbon phases. Elemental analysis was obtained by x-ray photoelectron spectroscopy. Films deposited at 400{degree}C from the tungsten precursor contained W (37-41%), C (46-48%), N(12-14%). These might be useful as protective coatings against corrosion and wear resistance.