Electronic spin transport in dual-gated bilayer graphene

Here, authors report spin transport in dual-gated, high-mobility bilayer graphene spin valves. Their comparative study suggests that substrate and contacts are not the key limiting sources for spin relaxation, but rather it pinpoints the role of polymer residues in current devices. Spin transport in bilayer graphene is gate tunable and this allows authors to demonstrate the evidence of magnetic moments which act as spin hot spots. By taking the advantage of their novel device architecture, they demonstrate the complete suppression of the spin signal while a transport gap was induced in these spin valve devices.