Band alignment tuning in GeS/arsenene staggered heterostructures

Abstract Building two-dimensional (2D) van der Waals heterostructures (vdWHs) has been interesting topic on the studies of 2D materials and devices. Here, we construct theoretically the GeS/arsenene vdWHs with staggered band alignment, which are useful to separate electron-hole pair and study optoelectronic devices. Interestingly, the application of positive electric field can keep the type-II band alignment, while the negative electric field transforms the staggered alignment to type-I band alignment. Thus, this studies pay the way to modify the electronic properties of GeS/arsenene vdWHs and explore possible devices applications.