Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling

We assess the analog/RF intrinsic performance of graphene FETs (GFETs) through a semiclassical transport model, including local and remote phonon scattering as well as band-to-band tunneling generation and recombination, validated by comparison with full quantum results over a wide range of bias voltages. We found that scaling is expected to improve the f T , and that scattering plays a role in reducing both the f T and the transconductance also in sub-100-nm GFETs. Moreover, we observed a strong degradation of the device performance due to the series resistances and source/drain to channel underlaps.