Old Web
English
Sign In
Acemap
>
Paper
>
Materials and Process Integration Issues in Metal Gate/High-k Stacks and Their Dependence on Device Performance
Materials and Process Integration Issues in Metal Gate/High-k Stacks and Their Dependence on Device Performance
2007
Alessandro Callegari
Katherina Babich
Sufi Zafar
Vijay Narayanan
Takashi Ando
Philip E. Batson
Keywords:
Metal gate
High-κ dielectric
Process integration
Electrical engineering
Stack (abstract data type)
Electronic engineering
Materials science
Engineering physics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
2
Citations
NaN
KQI
[]