The physics of catastrophic optical damage in high-power AlGaInP laser diodes
2008
An innovative combination of concepts, namely microphotoluminescence (μPL) mapping, focused ion beam (FIB)
microscopy, micro-Raman spectroscopy, and high-speed thermal imaging, was employed to reveal the physics behind
catastrophic optical damage (COD), its related temperature dynamics, as well as associated defect and near-field
patterns.
μPL mapping showed that COD-related defects are composed of highly nonradiative complex dislocations, which start
from the output facet and propagate deep inside the cavity. Moreover, FIB analysis confirmed that those dark line defects
are confined to the active region, including the quantum wells and partially the waveguide. In addition, the COD
dependence on temperature and power was analyzed in detail by
micro-Raman spectroscopy and real-time thermal
imaging. For AlGaInP lasers in the whole spectral range of 635 to 650 nm, it was revealed that absorption of stimulated
photons at the laser output facet is the major source of facet heating, and that a critical facet temperature must be reached
in order for COD to occur. A linear relationship between facet temperature and near-field intensity has also been
established. This understanding of the semiconductor physics behind COD is a key element for further improvement in
output power of AlGaInP diode lasers.
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