Influence on the analog/RF performance in graded channel Gate Stack DG-MOSFETs

It is presently established that Double Gate MOSFET has better immunity to SCE. However in underlap MOSFET structure on current reduced significantly. Graded Channel Double Gate MOSFET (GC DG MOSFET) with Gate Stack architectures show better performance for its enhanced immunity to short channel effects. In this work, low-high and high-low channel doping of the Double Gate MOSFET with Gate Stack configurations have been compared for improved subthreshold analog performance in the 20nm gate length regime. For analysis the parameters studied are the on current (Ids), the transconductance (gm), the gain per unit current (gm/Ids), the total gate capacitance (Cgg) and, the cut off frequency (fT). Analysis suggested that the average on current, the transconductance and, the cut off frequency increases for low-high graded channel doping architecture however, the total gate capacitance decreases for this structure.