RF NMOS switch with dedicated sinks for reduced leakage current

In this paper we introduce a method to significantly reduce the substrate leakage current in an RF NMOS switch device without degrading the device figure-of-merit (R on ×C off ), and with no increase in device complexity. This is based on modifying the structure layout, and introducing dedicated sinks. These sinks prevent the substrate's minority carriers from reaching the source/drain regions, thereby removing it from the signal path. In addition, this approach allows independent tuning of two parameters, leakage and R on ×C off figure-of-merit.