Radiation damage of silicon detectors by monoenergetic neutrons and electrons

Abstract The effects of radiation damage produced by monoenergetic neutrons and electrons in silicon detectors are studied. With respect to the detector performance detailed measurements of the leakage current increase, charge collection deficiency and change of the effective donor concentration are investigated as function of energy and particle fluence. A first set of results obtained by using the method of deep level transient spectroscopy leads to preliminary conclusions for the observed radiation induced point defects.