A process for producing a semiconductor element with a U-shaped gate structure

A process for producing a semiconductor device (100) comprising: Forming an insulating layer (120) on a substrate (110); Forming a fin structure (210) on the insulating layer (120), said ridge structure (210) having a plurality of side surfaces, a top surface and a bottom surface; Forming a dielectric layer (140) over the top surface of the ridge structure (210); Forming a gate dielectric layer (410) made of a material which is different from that of the dielectric layer (140) different, on side surfaces and the bottom surface of the web (210); Forming a source region and a drain region (220, 230); Etching the insulating layer (120) to undercut the insulating layer (120) below the lower side surface of the fin structure (210) in part; isotropic etching in the lateral direction by a region of the insulating layer (120) beneath the partially undercut bottom surface of the fin structure (210) with the exception of respective end portions of the fin structure (210); Depositing a gate material (510) over the fin structure (210), wherein the gate material (510) on the gate dielectric layer ...