A process for producing a high-resistance silicon carbide single crystal

A process for producing a high-resistance silicon carbide (SiC) single crystal, in a culture reactor by using a PVT or HTCVT method, characterized - that is set inside the reactor a water vapor density of at least 1 and at most 20 - that bound is removed by reaction with the water vapor in a gaseous compound convicted sulfur by evacuating the reactor from the system in the solid state.