Selective-area growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si and tunneling transistor application

Tunnel transistors are promising building-blocks for future low-power integrated circuits because steeper subthreshold-slope of the device can effectively reduce the turn-on voltage of electronic switches. Here, we investigate selective-area growth of InGaAs/InP/InAlAs/InP core-multishell (CMS) nanowire with modulation-doping and demonstrate vertical tunnel transistor using the CMS nanowire/Si heterojunction. The device indicated rapid current-enhancement due to the modulation-doped nanowire while keeping steeper subthreshold slope.