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MOVPE成長InGaN厚膜における相分離の臨界膜厚 (電子部品・材料)
MOVPE成長InGaN厚膜における相分離の臨界膜厚 (電子部品・材料)
2014
kazuki kodama
Tanvir Hasan
hiroyuki nomura
naoki juu kawa
isami yamamoto
masaaki katurahara
Keywords:
Metalorganic vapour phase epitaxy
Phase (matter)
Materials science
Chromatography
Optoelectronics
critical thickness
Correction
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