A Universal Ion Implantation Model for All Species

A physically based model for ion implantation of any species into single crystal silicon has been developed, tested and im- plemented in the ion implant simulator, UT-MARLOWE. In this model, an interpolation scheme, based on mathematical proper- ties of ion-target interatomic potential, was employed and imple- mented to calculate the scattering process. Using this scheme, the resulting energy, direction and momentum of the ion and target can be derived from the existing scattering tables of UT-MARLOWE without calculating the entire scattering process. The method has advantages in terms of both accuracy and computational efficiency, as well as significantly reduced cost of code development. The im- purity profiles and damage profiles predicted by the model simu- lations have been compared with secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectrometry (RBS), and excellent agreement with experimental data has been achieved.