Design of Drive Parameters Considering Crosstalk Suppression for SiC MOSFET Applications

Considering crosstalk suppression, the excellent characteristics of SiC MOSFET that high switching speed and low switching losses in half-bridge applications are not sufficiently utilized due to improper driving parameters. The passive suppression strategy simply and effectively suppress crosstalk by paralleling a small capacitor between the gate and source. Although the approach does alleviate crosstalk to a certain extent, it does slow down the switching speed and increase the switching losses in essence, so it is necessary to design driving parameters reasonably. This paper provides a trade-off parameters design method for driving resistor and the parallel capacitor to cater for high-speed and high-frequency applications, while taking driving circuit analysis and chips driving capability into account. Meanwhile, complicated calculations and a large number of experiments are avoided to obtain appropriate parameter values. What’s more, the rationality and effectiveness of parameters design are verified by experiments.