Etching simulation of convex and mixed InP and Si structures

Abstract In this paper, we extend the simulation algorithm successfully developed for concave shapes to convex and mixed structures. We restrict the implementation to low-indexed planes. In spite of this simplification, high-indexed planes with positive inclination emerge at convex corners. We compare InP and Si structures etched in HBr and KOH—isopropanol, respectively, with the simulation results. The experiments with InP show again high-indexed planes, but with negative inclination. The contour of the simulated mesa-surface agrees well with that of the experiment.