Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated with Si

Up to date, self-assembled semiconductor quantum dot-based non-classical single-photon emitters operating in the long-wavelength telecom bands (>1460 nm) were investigated separately from the Si platform despite their great potential for heterogeneous integration with the silicon-based quantum photonic chips. Here, we demonstrate a novel, robust, cost-effective, and industry-compatible approach for achieving a single-photon emitter based on an InAs/InP quantum dot heterogeneously integrated with the Si platform. We show that by simplifying the device architecture and employing a metallic mirror beneath the emitter instead of a monolithic Bragg reflector, obtained photon extraction efficiency from the emitter reaches 10% with room for further improvement, which is a very competitive measure for the up-to-date solutions. The device architecture and its fabrication procedure led to single-photon generation purity above 98% at the liquid helium temperature and triggered operation mode and 75% at 80 K.