Quantum Hall Effect and Spin Resolved Anti‐crossing of Landau Levels in AlGaSbAs/InAs and AlInSb/InAsSb Quantum Wells

We have investigated transport properties in InAs/AlGaSbAs and InAsSb/AlInSb quantum wells (QW) in the quantum Hall regime. The carrier density in InAs QW is tuned by using a front gate bias, and the contour plot of resistance as a function of perpendicular magnetic field and gate voltage reveals the spin‐resolved subband‐Landau‐level coupling in tilted magnetic fields. An anomalous transport occurred by the coexistence of electrons and holes in the system has been observed both in InAs and InAsSb QWs.