High-Speed InGaAs/InAlAs SACM Avalanche Photodiodes with Robust Optical & Electrical Overload
2019
We study the optical and electrical overload of high-speed InGaAs/InAlAs avalanche photodiodes for future PON OLT and ONU applications. We achieve robust optical overload at +4dBm with successful suppression of surface charge accumulation and multiplication-layer junction breakdown. Physical model of surface state charge accumulation under optical stress is also presented.
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