Overcurrent protection method and the overcurrent protector of isolated gate bipolar transistor (IGBT)

The invention provides an overcurrent protection method and an overcurrent protector of an isolated gate bipolar transistor (IGBT). The method comprises the steps: obtaining a beam voltage of the IGBT; judging whether overcurrent happens or not according to the beam voltage; and cutting off the IGBT if the overcurrent happens, wherein the beam voltage is a modified beam voltage Vce'; the modified beam voltage Vce' is a beam voltage corresponding to a collector current Ic under a reference junction temperature; the collector current Ic corresponds to the beam voltage Vce of the IGBT under the current junction temperature; the current junction temperature is not equal to the reference junction temperature. The overcurrent protection method and the overcurrent protector of the IGBT judge the overcurrent by combining the junction temperature information, thereby being more accurate in judging the overcurrent than the current overcurrent protection method.