Solid Solution Hg 1– x Mn x Te – Based Mid Infrared Schottky Diodes

The investigations of electrical and photoelectric parameters of the semiconductor solid solutions Hg 1 − x Mn x Te-based Schottky photodiodes being applicable for λ = 3 ÷ 5 μm and λ = 8 ÷ 14 μm regions are presented in this paper. These diodes overlap the spectral range which is wider than that of InSb-based photodiodes and demonstrate the better perfection of the crystal structure in comparison with the HgCdTe-based photodiodes.