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Efficient low temperature cSi surface passivation using aSi grown by PECVD
Efficient low temperature cSi surface passivation using aSi grown by PECVD
2003
F. Roca
Salvatore Bellone
G. Contento
D. Daliento
R. Fucci
Heinrich Christoph Neitzert
N Martusciello
N. Sanseverino
M. Tucci
L. Zeni
Keywords:
Passivation
Plasma-enhanced chemical vapor deposition
Analytical chemistry
Materials science
Optoelectronics
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