Advanced 0.13um smart power technology from 7V to 70V

This paper presents BCD process integrating 7V to 70V power devices on 0.13um CMOS platform for various power management applications. BJT, Zener diode and Schottky diode are available and non-volatile memory is embedded as well. LDMOS shows best-in-class specific Ron (R SP ) vs. BV DSS characteristics (i.e., 70V NMOS has R SP of 69mΩ-mm 2 with BV DSS of 89V). Modular process scheme is used for flexibility to various requirements of applications.