Stimulated red emission from InAs monolayers embedded in the active region of AlxGa1-xAs barriers

The stimulated and spontaneous emission spectra from InAs monolayer quantum wells (QW) embedded in the active layers of Al x Ga 1-x As barriers grown by metal organic vapor phase epitaxy (MOVPE) has been investigated in the temperature range 10 150 K) decreases, and a strong quenching effect of the emission is observed. The emission spectra at room temperature reveal the existence of an Al x Ga 1-x As barrier peak that confirms the escape of the carriers into the Al x Ga 1-x As barrier followed by increased nonradiative recombination.