Luminescent properties of A{sup II}B{sup III}{sub 2}C{sup VI}{sub 4} compounds

Active investigations of the luminescence of rare-earth ions (REI) in wide-gap semiconductors have been under way recently. This interest is due to the possibility of efficient REI excitation through wide absorption bands of the base, which, in turn, reduces the excitation threshold thus enhancing the luminescence yield efficiency. Furthermore, study of the spectral luminescent properties of REI in semiconductors and dielectrics provides information on the immediate vicinity of REI, on the symmetry of the luminescence centers, and on the crystal field. REE-activated crystals of A{sup II}B{sub 2}{sup III}C{sub 4}{sup VI} compounds and solid solutions (SS) of (Ga{sub 2}S{sub 3}){sub 1-x}(Eu{sub 2}O{sub 3}){sub x} can be an active medium for luminescent lamps, X-ray screens, color displays, and other systems for data representation. The authors performed investigations of the luminescent properties of compounds with the general formula A{sup II}B{sub 2}{sup III}C{sub 4}{sup VI} (where A{sup II}-Ca, Eu, Yb; B{sup III}-Ga, In; C{sup VI}-S, Se) and the above SS (where 0.01 {<=} x {<=} 0.07).