Dielectric relaxation study of the ceramic matrix BaBi 4 Ti 4 O 15 :Bi 2 O 3

Abstract The dielectric properties of a BaBi 4 Ti 4 O 15 ceramic were investigated at data temperature range from 340 to 520 °C. The effect of excess bismuth oxide (1–10 wt%) in the ceramics by solid state reaction has been investigated. Rietveld refinement observed increase in the fundamental crystallographic parameter c / a of the 10.8074 up to 10.8900 for BBT, compared to BBT-doped materials. The complex studies of impedance exhibit electrical properties of the material are strongly dependent on temperature. The temperature dependence of the dielectric permittivity showed the presence of a structural phase transition that was observed at near 450 °C. The decrease in value of grain and grain boundary resistance with increasing temperature suggests the existence of an increase of the conductivity. The nature of variation of DC conductivity with temperature confirms the Arrhenius behavior of the material. The DC electrical and thermal conductivity of grain and grain boundary have been assessed.