Unidirectional spin-Hall and Rashba−Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures

The large spin−orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin−orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers. Unidirectional spin Hall magnetoresistance enables the new spintronic devices but is limited by the low amplitude or working temperature. Here, the authors report the large unidirectional spin Hall magnetoresistance in a topological insulator and ferromagnetic metal bilayer system at relatively higher temperature.