Growth and characterization of low-temperature Si 1-x Sn x on Si using plasma enhanced chemical vapor deposition

Silicon-tin (Si1-xSnx) films have been grown using plasma-enhanced chemical vapor deposition on Si (001) substrate. X-ray photoelectron spectroscopy characterization of the thin films show successful substitutional incorporation of Sn in Si lattice up to 3.2%. The X-ray diffraction characterizations show epitaxial growth of Si1-xSnx films (001) direction. The Sn incorporation has been measured using X-ray photoelectron spectrometry and the film uniformity was confirmed using energy dispersive X-ray spectrometry.