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1.3THzのfmaxを持つドレイン側リセス拡張InP HEMT
1.3THzのfmaxを持つドレイン側リセス拡張InP HEMT
2017
takahasi tuyosi
kawano youiti
makiyama gouzou
siba syouiti
satou yuu
naka sya yasuhiro
hara naoki
Keywords:
Materials science
High-electron-mobility transistor
Electronic engineering
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