Effect of material parameters on the quantum efficiency of GaInAsSb detectors

Abstract In this paper, a theoretical study of the effect of material parameters on the quantum efficiency of a homogeneous GaInAsSb infrared photovolatic detector is presented. The considerations are carried out for the near room temperature and 2.5 μ m wavelength. The calculated results show that the quantum efficiency depends strongly on the carrier concentrations in the n- and p-regions. In addition, the absorption coefficient, the surface recombination velocities and the widths of the two regions also effect the quantum efficiency.