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Suppression of Stand-By Tunnel Current in Ultra-Thin Gate Oxide MOSFETs by Dual Oxide Thickness MTCM
Suppression of Stand-By Tunnel Current in Ultra-Thin Gate Oxide MOSFETs by Dual Oxide Thickness MTCM
1999
Takashi Inukai
Toshiro Hiramoto
Keywords:
Oxide
Time-dependent gate oxide breakdown
Gate oxide
Electronic engineering
Materials science
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